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Product description
CRYSTECH offers:
● Various doping concentration from 0.1% to 3%
● Doping concentration tolerance: ±0.05%(atm%<1%), ±0.1%(atm%≥1%)
● With quick delivery
● With competitive price
● Industrial Laser
● Medical Laser
● Laser show system
● Mainly used for end-pumped CW and QCW low and medium power solid state lasers.
● Low lasing threshold and high slope efficiency
● Large stimulated emission cross-section at lasing wavelength
● High absorption over a wide pumping wavelength bandwidth
● Uniaxial and large birefringence, emits polarized laser
● Low dependency on pumping wavelength and easy to get single mode output
Dopant 0.1% ~ 3% Orientation A-CUT +/-0.5°
Size&Tolerance  W(+/-0.1)*H(+/-0.1)*L(+0.5/-0.1)mm
Surface quality 10/5 Perpendicularity ≤5′
Parallelism  ≤10″ Bevel <0.2mmx45°
Flatness  λ/10@633nm Chips <0.1mm
TWD  λ/6@633nm CA ≥95%

C1--- AR@1064(R<0.2%)   C2--- AR@1064(R<0.2%)&532(R<0.5%)   C3--- AR@1064(R<0.2%)&808(R<0.5%)     

C4--- AR@1064(R<0.2%)&532(R<0.5%)&808(R<3%)   C5--- HR@1064(R>99.8%)&HT@808(T>95%)   

C6--- HR@1064(R>99.8%)&532(R>99.5%)&HT@808(T>95%)

Doping Cut Angle Size(mm) Coating
2% A-CUT 3x3x1 S1:HR@1064&532&HT@808nm S2:AR@1064&532nm
1% A-CUT 3x3x2 S1:HR@1064&532&HT@808nm S2:AR@1064&532nm
1% A-CUT 3x3x3 S1:HR@1064&532&HT@808nm S2:AR@1064&532nm
0.7% A-CUT 3x3x3 S1:HR@1064&532&HT@808nm S2:AR@1064&532nm
0.7% A-CUT 3x3x3 S1:AR@1064&532&808nm S2:AR@1064&532nm
0.7% A-CUT 3x3x5 S1:HR@1064&532&HT@808nm S2:AR@1064&532nm
0.5% A-CUT 3x3x5 S1:HR@1064&808nm S2:AR@1064nm
0.5% A-CUT 3x3x10 S1:AR@1064&808nm S2:AR@1064nm
0.3% A-CUT 3x3x10 S1:AR@1064&808nm S2:AR@1064nm
0.3% A-CUT 3x3x12 S1:AR@1064&808nm S2:AR@1064nm
0.27% A-CUT 3x3x10 S1:AR@1064&808nm S2:AR@1064nm
0.27% A-CUT 3x3x12 S1:AR@1064&808nm S2:AR@1064nm
0.2% A-CUT 3x3x10 S1:AR@1064&808nm S2:AR@1064nm
0.2% A-CUT 3x3x12 S1:AR@1064&808nm S2:AR@1064nm


Physical Proertie:
Crystal Structure Tetragonal System
Space Group I41/amd 
Lattice Constants a=b=0.71183nm, c=0.62932nm。
Melting Temperature 1825℃
Density 4.22g/cm3
Thermal Conductivity <100>(a): 0.0510 W/cmK <001>(c): 0.0523 W/cmK
Thermal Expansion@25℃ αa=4.43 ×10-6/K αc=11.37 ×10-6/K
Mohs hardness 4-5
Index of Refraction no=1.958, ne=2.168
Thermal Optical Coefficient dna/dT=  8.5×10-6/K dnc/dT=  3.0×10-6/K
  Optical Properties:
lasing wavelength 1064nm, 1342nm, 914nm
Pump Wavelength 808nm
Emission Cross section @1064nm 25 ×10-19cm2
absorption cross section @ 808nm 2.7×10-19cm2 (1 at% Nd3+)
absorption coefficient@808nm 30.6/cm( E∥C ),  11.4 /cm (E⊥C)
Intrinsic loss: 0.02cm-1 @1064nm
Gain bandwidth: 0.96nm@1064nm
Polarization E∥C (parallel to C axis, π polarization)
Fluorescent lifetime 90 μs (1% Nd doping)
Sellmeier Equation n02=3.77834+0.069736/(λ2-0.04724)-0.010813λ2 ne2=4.59905+0.110534/(λ2-0.04813)-0.012676λ2

  Laser Properties: The Nd:YVO4 crystal has large stimulated emission cross-sections at both 1064nm and 1342nm. The stimulated emission cross-section of an a-axis cut Nd:YVO4 crystal at 1064nm is about 4 times higher than that of the Nd:YAG crystal. Although the lifetime of Nd:YVO4 is about 2.7 times shorter than that of Nd:YAG. Because of its high pump quantum efficiency, the slope efficiency of Nd:YVO4 can be very high if the laser cavity is properly designed. In the following Table lists the major laser properties of Nd:YVO4 in comparison with those of Nd:YAG.  

Laser crystal Doping(atm%) σ(x10-19cm2) a (cm-1) τ (μs) La (mm) Pth(mW) η s(%)
Nd:YVO4(a-cut) 1.0
Nd:YVO4(c-cut) 1.1 7 9.2 90   231 45.5
Nd:YAG 0.85 6 7.1 230 1.41 115 38.6
Note: stimulated emission cross-sections (σ), Absorption Coefficient (α), Fluorescent lifetime (τ),Absorption Length (La),threshold Power (Pth) , Pump Quantum Efficiency (ηs).
Crystals Size (mm3) Pump Power Output (at 1064nm)
Nd:YVO4 3x3x1 850mW 350mW
Nd:YVO4 3x3x5 15W 6W
Nd:YAG 3x3x2 850mW 34mW
  Diode pumped Nd:YVO4 laser output comparing with diode pumped Nd:YAG laser.
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