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RTP Q-Switch

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Product description
Through years of research and development, CRYSTECH has achieved great advances in growing techniques of RTP crystals.  We are able to provide excellent RTP crystals both in matched pairs or single crystals.
APPLICATION:
● Q-switch (Laser Ranging, Laser Radar, medical laser, Industrial Laser)
● Laser power/phase modulation
● Pulse Picker
ADVANTAGE:
● An excellent crystal for Electro Optical applications at high repetition rate
● Large nonlinear optical and electro-optical coefficients
● Low half-wave voltage
● No Piezoelectric Ringing
● high damage threshold;
● High Extinction Ratio
● Non-hygroscopic
 
Dimension Tolerance W(+/-0.1) * H(+/-0.1) * L(+0.5/-0.1) mm
Angle Tolerance +/-0.15° Perpendicularity ≤10′
Scratch / Dig 20/10 Chamfer ≤0.2mmx45°
Parallelism ≤5″ Chip ≤0.1mm
Flatness λ/10@633nm CA ≥90%
TWD λ/6@633nm Electrode Ti  or  Au
Extinction Ratio >20dB    
Coating AR@1064nm(R<0.2%),  or customized upon request
Damage Threshold 600MW/cm² 10ns 10Hz at 1064nm

Physical and Optical Properties    

Crystal structure Orthorhombic
Cell Parameters a = 12.96 Å; b =10.56 Å; c =6.49 Å
Mohs hardness 5
Density, g/cm3 3.6
Melting Point: ~ 1000˚C
Ferroeletric transition temp. ~ 810°C
Color Colorless
Thermal Expansion Coefficients (/K)  αx=1.01x10-5, αy =1.37x10-5, αz =-4.17x10-6
Dielectric Constant Eeff= 13.0
Thermo-optical coefficients (dλ/dT) -0.029 nm / °C
Electro-optic constants Y-cut: r51=38.5 pm/V X-cut: r33=35 pm/V,r23=12.5 pm/V, r13=10.6 pm/V
Nonlinear Coefficients: d15 = 2.0 pm/V; d24 = 3.6 pm/V; d31= 2.0 pm/V d32 = 3.6 pm/V; d33 = 8.3 pm/V
Electrical Resistivity around 1011-1012ohm·cm
Hygroscopic no
Static Half Wave Voltage at 1064 nm   4x4x20 mm: 1,600 V 6x6x20 mm: 2,400 V
Transmitting range: 350~4500 nm
Sellmeier equations(λ in um) nx2=2.15559 + 0.93307[1-(0.20994/λ)2] - 0.01452λ2
ny2=2.38494 + 0.73603[1-(0.23891/λ)2] - 0.01583 λ2
nz2=2.27723 + 1.11030[1-(0.23454/λ)2] - 0.01995λ2

 

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